Quantum Kinetics in Transport and Optics of Semiconductors (Springer Series in Solid-State Sciences) pdf epub mobi txt 電子書 下載2026
出版者:Springer
作者:Hartmut Haug
出品人:
頁數:315
译者:
出版時間:2004-02-06
價格:USD 149.00
裝幀:Hardcover
isbn號碼:9783540616023
叢書系列:
圖書標籤:
- 量子輸運
- 物理
- 凝聚態理論
- 凝聚態物理
- 凝聚態7
- Semiconductors
- Quantum Kinetics
- Transport Phenomena
- Optics
- Solid-State Physics
- Quantum Mechanics
- Material Science
- Condensed Matter Physics
- Electronic Properties
- Photonics
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具體描述
Quantum Kinetics in Transport and Optics of Semiconductors deals with the quantum kinetics for transport in low-dimensional microstructures and for ultrashort laser-pulse spectroscopy. The nonequilibrium Green function theory is described and used for the derivation of the quantum kinetic equations. Numerical methods for the solution of the retarded quantum kinetic equations are discussed and results are presented for quantum high-field transport and for mesoscopic transport phenomena. Quantum beats, polarization decay and non-Markovian behaviour are treated for femtosecond spectroscopy on a microscopic basis.
半導體中載流子輸運與光學性質的理論模型與實驗研究 本書聚焦於半導體材料在特定物理條件下的復雜電子行為，深入探討瞭載流子（電子和空穴）在材料內部的輸運機製，以及這些輸運過程如何影響材料的光學響應。本書旨在為凝聚態物理、半導體器件物理以及材料科學領域的研究人員和高級學生提供一個全麵且深入的理論框架和實驗驗證的視角。 第一部分：半導體基礎與載流子動力學 本書伊始，將係統迴顧半導體物理學的核心概念，但著重於超越標準教科書範疇的復雜情景。我們將詳細討論能帶結構理論在異質結和量子限製結構中的局限性，並引入更先進的有效質量近似的修正模型，特彆是針對高麯率能帶（如在II-V族和III-N族化閤物半導體中觀察到的情況）下的載流子有效質量張量描述。 隨後，核心內容轉嚮載流子輸運的微觀動力學。標準弛豫時間近似（RTA）在描述強散射、非平衡或高電場條件下的輸運時錶現不足。本書將引入玻爾茲曼輸運方程（BTE）的現代求解方法，包括濛特卡洛模擬（Monte Carlo Simulation）在求解高維、多散射機製下的載流子分布函數方麵的應用。我們不僅關注常見的聲子散射（彈性與非彈性），還將深入探討缺陷誘導散射（如空位、間隙原子和位錯）對遷移率的顯著影響，特彆是當缺陷密度超過臨界閾值時引起的局域化效應。 載流子-載流子相互作用在高度摻雜或高注入密度下的作用是本書的關鍵章節之一。我們將利用朗道費米液體理論的框架來修正高密度等離子體中的有效散射率，並討論載流子聚集（Carrier Clustering）現象對電導率和光緻發光壽命的非綫性影響。針對超快過程，本書將介紹非平衡態格林函數（NEGF）方法，用於描述在極短時間尺度內（皮秒至飛秒）載流子從注入到熱化的動力學過程。 第二部分：光學響應的微擾理論與高級建模 在光學性質方麵，本書將從綫性響應理論齣發，建立電導率張量與載流子分布函數之間的聯係。我們將詳細分析德魯德模型（Drude Model）的適用邊界，並引入量子限製效應對光學吸收邊和色散關係的修正。 一個重要的章節將緻力於電磁波在半導體中的傳播與耦閤。這包括對錶麵等離子激元（Surface Plasmon Polaritons, SPPs）在金屬/半導體界麵上的激發條件、場增強效應及其在傳感應用中的潛力進行詳盡的分析。此外，對體等離激元（Volume Plasmon Polaritons, VPPs）在顆粒狀半導體復閤材料中的共振行為也將進行深入探討。 針對發光特性，本書將區分輻射復閤（Radiative Recombination）與非輻射復閤（Non-Radiative Recombination）機製。重點在於俄歇復閤（Auger Recombination）的精確計算，尤其是在高載流子濃度下，俄歇過程如何成為限製發光效率的主要瓶頸。我們將采用基於第一性原理計算的速率方程模型來預測不同溫度和注入水平下的量子效率。 第三部分：界麵效應與異質結中的輸運 半導體器件的性能往往受限於材料界麵。本書將專門闢齣章節討論界麵態（Interface States）對電荷俘獲和電場分布的調控作用。通過肖特基勢壘（Schottky Barrier）的能級圖和熱發射模型，我們將詳細分析接觸電阻和歐姆接觸的形成機理。 在異質結體係中，晶格失配導緻的位錯（Dislocations）不僅影響載流子遷移率，更直接影響光發射。本書將結閤應變工程（Strain Engineering）的原理，分析如何通過選擇閤適的襯底或超晶格結構來控製本徵載流子有效質量和帶隙，從而優化器件性能。 此外，對於量子阱（Quantum Wells）和量子點（Quantum Dots）等低維結構，本書將運用有效介質理論（Effective Medium Theory）和二維泊鬆方程來描述結構內部的電荷積纍和勢壘調製。特彆關注載流子在尺寸限製下的量子限製霍爾效應及其對光學吸收特性的藍移現象。 第四部分：實驗技術與數據解讀 理論模型必須與實驗數據緊密結閤。本書的最後部分將介紹幾種關鍵的實驗技術，並指導讀者如何從實驗數據中反演齣所需的物理參數。 時間分辨光緻發光（TRPL）將用於測量載流子壽命和復閤速率。我們將討論如何區分直接擬閤指數衰減和更復雜的復閤動力學模型。太赫茲光譜（THz Spectroscopy）作為一種非接觸式的錶徵手段，將用於精確測量低頻介電常數和遠紅外波段的載流子遷移率，尤其適用於分析摻雜不均勻性和自由載流子吸收。 電場調製光譜技術，如吸收差分光譜（Electroabsorption）和反射差分光譜（Electroreflectance），將被詳細介紹，它們是確定關鍵躍遷能量和斯塔剋效應（Stark Effect）的有力工具。通過解讀這些光譜的洛倫茲函數擬閤結果，讀者將能確定界麵勢壘寬度和內部電場強度。 總結： 本書旨在提供一個多層次、跨學科的視角，連接瞭從基礎量子力學到復雜工程應用的半導體物理鏈條。通過對載流子輸運和光學響應的全麵理論建模和對前沿實驗技術的闡釋，期望能為研究者提供解決當前半導體材料與器件挑戰的堅實理論基礎。
作者簡介
目錄資訊
Part 1 Introduction to Kinetics and Many-Body Theory
1. Boltzmann Equation
1.1 Heuristic Derivation
of the Semiclassical Boltzmann Equation
1.2 Approach to Equilibrium, H-Theorem
1.3 Linearization, Eigenfunction Expansion
2. Numerical Solutions of the Boltzmann Equation
2.1 Linearized Coulomb Boltzmann Kinetics
of a 2D Electron Gas
2.2 Ensemble Monte Carlo Simulation
2.2.1 General Theory
2.2.2 Simulation of the Relaxation Kinetics
of a 2D Electron Gas
2.3 N+N-N+-Structure: Boltzmann Equation Analysis
3. Equilibrium Green Function Theory
3.1 Second Quantization
3.2 Green Functions
3.2.1 Examples of Measurable Quantities
3.3 Fluctuation-Dissipation Theorem
3.4 Perturbation Expansion of the Green Function
3.5 Examples of Simple Solvable Models
3.5.1 Free-Particle Green Function
3.5.2 Resonant-Level Model
3.6 Self-Energy
3.6.1 Electron-Phonon Interaction
3.6.2 Elastic Impurity System; Impurity Averaging
3.7 Finite Temperatures
Part 11 Nonequilibrium Many-Body Theory
4. Contour Ordered Green Functions
4.1 General Remarks
4.2 Two Transformations
4.3 Analytic Continuation
5 Basic Quantum Kinetic Equations
5.1 The Kadanoff-Baym Formulation
5.2 The Keldysh Formulation
6. Boltzmann Limit
6.1 Gradient Expansion
6.2 Quasiparticle Approximation
6.3 Recovery of the Boltzmann Equation
7 Gauge Invariance
7.1 Choice of Variables
7.2 Gauge Invariant Quantum Kinetic Equation
7.2.1 Driving Term
7.2.2 Collision Term
7.3 Retarded Green Function
8. Quantum Distribution Functions
8.1 Relation to Observables, and the Wigner Function
8.2 Generalized Kadanoff-Baym Ansatz
8.3 Summary of the Main Formal Results
Part III Quantum Transport in Semiconductors
9. Linear Transport
9.1 Quantum Boltzmann Equation
9.2 Linear Conductivity of Electron-Elastic Impurity Systems
9.2.1 Kubo Formula
9.2.2 Quantum Kinetic Formulation
9.3 Weak Localization Corrections to Electric Conductivity
10. A Model for Dynamical Disorder:
The Gaussian White Noise Model
10.1 Introduction
10.2 Determination of the Retarded Green Function
10.3 Kinetic Equation for the GWN
10.4 Other Transport Properties
11. Quantum High-Field Transport in Semiconductors
11.1 Introduction
11.2 Free Green Functions and Spectral Functions
in an Electric Field
11.3 Resonant-Level Model in High Electric Fields
11.3.1 Introduction
11.3.2 Retarded Green Function: Single Impurity Problem
11.3.3 Retarded Green Function: Dilute Concentration
of Impurities
11.3.4 Analytic Continuation
11.3.5 Quantum Kinetic Equation
11.4 Quantum Kinetic Equation for Electron-Phonon Systems
11.5 An Application:
Collision Broadening for a Model Semiconductor
11.5.1 Analytical Considerations
11.5.2 A Simple Model:
Optical Phonon Emission at T = 0
11.6 Spatially Inhomogeneous Systems
12. Transport in Mesoscopic Semiconductor Structures
12.1 Introduction
12.2 Nonequilibrium Techniques
in Mesoscopic Tunneling Structures
12.3 Model Hamiltonian
12.4 General Expression for the Current
12.5 Non-Interacting Resonant-Level Model
12.6 Resonant Tunneling with Electron-Phonon Interactions
12.7 Transport Through a Coulomb Island
13. Time-Dependent Phenomena
13.1 Introduction
13.2 Applicability to Experiments
13.3 Mathematical Formulation
13.4 Average Current
13.5 Time-Dependent Resonant-Level Model
13.5.1 Response to Harmonic Modulation
13.5.2 Response to Step-Like Modulation
13.6 Linear-Response
13.7 Fluctuating Energy Levels
Part IV Theory of Ultrafast Kinetics
in Laser-Excited Semiconductors
14. Optical Free-Carrier Interband Kinetics
in Semiconductors
14.1 Interband Transitions in Direct-Gap Semiconductors
14.2 Free-Carrier Kinetics Under Laser-Pulse Excitation
14.3 The Optical Free-Carrier Bloch Equations
15. Interband Quantum Kinetics
with LO-Phonon Scattering
15.1 Derivation of the Interband Quantum Kinetic Equations
15.2 Approximations for the Green Functions G and G
15.3 Intraband Quantum Kinetics
15.4 Linear Polarization Kinetics, Phonon Sidebands
15.5 Coupled Interband Kinetic Equations
in Diagonal Approximation
15.6 Numerical Studies
16. Exciton Quantum Kinetics in Polar Semiconductors
16.1 Interband Quantum Kinetic Equations
with Excitonic Effects
16.2 Quantum Beats and Urbach Tail
16.2.1 LO-Phonon Quantum Beats
16.2.2 Urbach Tail Absorption
16.3 Excitonic Optical Stark Effect
16.4 Coupled Quantum Kinetics of Electrons and Phonons
16.5 Quantum Coherence of the Green Functions
17. Two-Pulse Excitation
17.1 Calculation of the Photon Echo
17.2 Calculation of the Four-Wave Mixing Signal
17.3 Comparison with Four-Wave Mixing Experiments
18. Coulomb Quantum Kinetics in a Dense Electron Gas
18.1 Introduction
18.2 Derivation of a Closed Quantum Kinetic Description
18.3 Simplifying Approximations
18.3.1 Initial Time Regime Without Screening
and Energy Conservation
18.3.2 Time-Dependent Plasmon Pole Approximation
18.3.3 Instantaneous Static Potential Approximation
19. Interband Coulomb Quantum Kinetics,
Optical Dephasing
19.1 Interband Quantum Kinetic Equations
with Coulomb Interaction
19.2 Early Stage of the Coulomb Quantum Kinetics
19.3 Quasi-Classical Theory of the Polarization Decay
20. The Build-Up of Screening
After Ultra-Short Pulse Excitation
20.1 The Model
20.2 Numerical Results
References
Subject Index
· · · · · · (收起)
1. Boltzmann Equation
1.1 Heuristic Derivation
of the Semiclassical Boltzmann Equation
1.2 Approach to Equilibrium, H-Theorem
1.3 Linearization, Eigenfunction Expansion
2. Numerical Solutions of the Boltzmann Equation
2.1 Linearized Coulomb Boltzmann Kinetics
of a 2D Electron Gas
2.2 Ensemble Monte Carlo Simulation
2.2.1 General Theory
2.2.2 Simulation of the Relaxation Kinetics
of a 2D Electron Gas
2.3 N+N-N+-Structure: Boltzmann Equation Analysis
3. Equilibrium Green Function Theory
3.1 Second Quantization
3.2 Green Functions
3.2.1 Examples of Measurable Quantities
3.3 Fluctuation-Dissipation Theorem
3.4 Perturbation Expansion of the Green Function
3.5 Examples of Simple Solvable Models
3.5.1 Free-Particle Green Function
3.5.2 Resonant-Level Model
3.6 Self-Energy
3.6.1 Electron-Phonon Interaction
3.6.2 Elastic Impurity System; Impurity Averaging
3.7 Finite Temperatures
Part 11 Nonequilibrium Many-Body Theory
4. Contour Ordered Green Functions
4.1 General Remarks
4.2 Two Transformations
4.3 Analytic Continuation
5 Basic Quantum Kinetic Equations
5.1 The Kadanoff-Baym Formulation
5.2 The Keldysh Formulation
6. Boltzmann Limit
6.1 Gradient Expansion
6.2 Quasiparticle Approximation
6.3 Recovery of the Boltzmann Equation
7 Gauge Invariance
7.1 Choice of Variables
7.2 Gauge Invariant Quantum Kinetic Equation
7.2.1 Driving Term
7.2.2 Collision Term
7.3 Retarded Green Function
8. Quantum Distribution Functions
8.1 Relation to Observables, and the Wigner Function
8.2 Generalized Kadanoff-Baym Ansatz
8.3 Summary of the Main Formal Results
Part III Quantum Transport in Semiconductors
9. Linear Transport
9.1 Quantum Boltzmann Equation
9.2 Linear Conductivity of Electron-Elastic Impurity Systems
9.2.1 Kubo Formula
9.2.2 Quantum Kinetic Formulation
9.3 Weak Localization Corrections to Electric Conductivity
10. A Model for Dynamical Disorder:
The Gaussian White Noise Model
10.1 Introduction
10.2 Determination of the Retarded Green Function
10.3 Kinetic Equation for the GWN
10.4 Other Transport Properties
11. Quantum High-Field Transport in Semiconductors
11.1 Introduction
11.2 Free Green Functions and Spectral Functions
in an Electric Field
11.3 Resonant-Level Model in High Electric Fields
11.3.1 Introduction
11.3.2 Retarded Green Function: Single Impurity Problem
11.3.3 Retarded Green Function: Dilute Concentration
of Impurities
11.3.4 Analytic Continuation
11.3.5 Quantum Kinetic Equation
11.4 Quantum Kinetic Equation for Electron-Phonon Systems
11.5 An Application:
Collision Broadening for a Model Semiconductor
11.5.1 Analytical Considerations
11.5.2 A Simple Model:
Optical Phonon Emission at T = 0
11.6 Spatially Inhomogeneous Systems
12. Transport in Mesoscopic Semiconductor Structures
12.1 Introduction
12.2 Nonequilibrium Techniques
in Mesoscopic Tunneling Structures
12.3 Model Hamiltonian
12.4 General Expression for the Current
12.5 Non-Interacting Resonant-Level Model
12.6 Resonant Tunneling with Electron-Phonon Interactions
12.7 Transport Through a Coulomb Island
13. Time-Dependent Phenomena
13.1 Introduction
13.2 Applicability to Experiments
13.3 Mathematical Formulation
13.4 Average Current
13.5 Time-Dependent Resonant-Level Model
13.5.1 Response to Harmonic Modulation
13.5.2 Response to Step-Like Modulation
13.6 Linear-Response
13.7 Fluctuating Energy Levels
Part IV Theory of Ultrafast Kinetics
in Laser-Excited Semiconductors
14. Optical Free-Carrier Interband Kinetics
in Semiconductors
14.1 Interband Transitions in Direct-Gap Semiconductors
14.2 Free-Carrier Kinetics Under Laser-Pulse Excitation
14.3 The Optical Free-Carrier Bloch Equations
15. Interband Quantum Kinetics
with LO-Phonon Scattering
15.1 Derivation of the Interband Quantum Kinetic Equations
15.2 Approximations for the Green Functions G and G
15.3 Intraband Quantum Kinetics
15.4 Linear Polarization Kinetics, Phonon Sidebands
15.5 Coupled Interband Kinetic Equations
in Diagonal Approximation
15.6 Numerical Studies
16. Exciton Quantum Kinetics in Polar Semiconductors
16.1 Interband Quantum Kinetic Equations
with Excitonic Effects
16.2 Quantum Beats and Urbach Tail
16.2.1 LO-Phonon Quantum Beats
16.2.2 Urbach Tail Absorption
16.3 Excitonic Optical Stark Effect
16.4 Coupled Quantum Kinetics of Electrons and Phonons
16.5 Quantum Coherence of the Green Functions
17. Two-Pulse Excitation
17.1 Calculation of the Photon Echo
17.2 Calculation of the Four-Wave Mixing Signal
17.3 Comparison with Four-Wave Mixing Experiments
18. Coulomb Quantum Kinetics in a Dense Electron Gas
18.1 Introduction
18.2 Derivation of a Closed Quantum Kinetic Description
18.3 Simplifying Approximations
18.3.1 Initial Time Regime Without Screening
and Energy Conservation
18.3.2 Time-Dependent Plasmon Pole Approximation
18.3.3 Instantaneous Static Potential Approximation
19. Interband Coulomb Quantum Kinetics,
Optical Dephasing
19.1 Interband Quantum Kinetic Equations
with Coulomb Interaction
19.2 Early Stage of the Coulomb Quantum Kinetics
19.3 Quasi-Classical Theory of the Polarization Decay
20. The Build-Up of Screening
After Ultra-Short Pulse Excitation
20.1 The Model
20.2 Numerical Results
References
Subject Index
· · · · · · (收起)
讀後感
評分
評分
評分
評分
評分
用戶評價
评分
經典之作，如果你學過瞭mahan的many particle physics中關於格林函數的部分，那麼接下來你可以直接拿起本書，看第一部分的最後2章。因為那2章是講述NEGF的重要章節，理解它們，你可以直擊Phys Rev Lett上的部分工作。當今器件物理中NEGF是如此之重要
评分經典之作，如果你學過瞭mahan的many particle physics中關於格林函數的部分，那麼接下來你可以直接拿起本書，看第一部分的最後2章。因為那2章是講述NEGF的重要章節，理解它們，你可以直擊Phys Rev Lett上的部分工作。當今器件物理中NEGF是如此之重要
评分經典之作，如果你學過瞭mahan的many particle physics中關於格林函數的部分，那麼接下來你可以直接拿起本書，看第一部分的最後2章。因為那2章是講述NEGF的重要章節，理解它們，你可以直擊Phys Rev Lett上的部分工作。當今器件物理中NEGF是如此之重要
评分經典之作，如果你學過瞭mahan的many particle physics中關於格林函數的部分，那麼接下來你可以直接拿起本書，看第一部分的最後2章。因為那2章是講述NEGF的重要章節，理解它們，你可以直擊Phys Rev Lett上的部分工作。當今器件物理中NEGF是如此之重要
评分經典之作，如果你學過瞭mahan的many particle physics中關於格林函數的部分，那麼接下來你可以直接拿起本書，看第一部分的最後2章。因為那2章是講述NEGF的重要章節，理解它們，你可以直擊Phys Rev Lett上的部分工作。當今器件物理中NEGF是如此之重要
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