Quantum Kinetics in Transport and Optics of Semiconductors (Springer Series in Solid-State Sciences) pdf epub mobi txt 电子书 下载 2026
出版者:Springer
作者:Hartmut Haug
出品人:
页数:315
译者:
出版时间:2004-02-06
价格:USD 149.00
装帧:Hardcover
isbn号码:9783540616023
丛书系列:
图书标签:
- 量子输运
- 物理
- 凝聚态理论
- 凝聚态物理
- 凝聚态7
- Semiconductors
- Quantum Kinetics
- Transport Phenomena
- Optics
- Solid-State Physics
- Quantum Mechanics
- Material Science
- Condensed Matter Physics
- Electronic Properties
- Photonics
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具体描述
Quantum Kinetics in Transport and Optics of Semiconductors deals with the quantum kinetics for transport in low-dimensional microstructures and for ultrashort laser-pulse spectroscopy. The nonequilibrium Green function theory is described and used for the derivation of the quantum kinetic equations. Numerical methods for the solution of the retarded quantum kinetic equations are discussed and results are presented for quantum high-field transport and for mesoscopic transport phenomena. Quantum beats, polarization decay and non-Markovian behaviour are treated for femtosecond spectroscopy on a microscopic basis.
半导体中载流子输运与光学性质的理论模型与实验研究 本书聚焦于半导体材料在特定物理条件下的复杂电子行为，深入探讨了载流子（电子和空穴）在材料内部的输运机制，以及这些输运过程如何影响材料的光学响应。本书旨在为凝聚态物理、半导体器件物理以及材料科学领域的研究人员和高级学生提供一个全面且深入的理论框架和实验验证的视角。 第一部分：半导体基础与载流子动力学 本书伊始，将系统回顾半导体物理学的核心概念，但着重于超越标准教科书范畴的复杂情景。我们将详细讨论能带结构理论在异质结和量子限制结构中的局限性，并引入更先进的有效质量近似的修正模型，特别是针对高曲率能带（如在II-V族和III-N族化合物半导体中观察到的情况）下的载流子有效质量张量描述。 随后，核心内容转向载流子输运的微观动力学。标准弛豫时间近似（RTA）在描述强散射、非平衡或高电场条件下的输运时表现不足。本书将引入玻尔兹曼输运方程（BTE）的现代求解方法，包括蒙特卡洛模拟（Monte Carlo Simulation）在求解高维、多散射机制下的载流子分布函数方面的应用。我们不仅关注常见的声子散射（弹性与非弹性），还将深入探讨缺陷诱导散射（如空位、间隙原子和位错）对迁移率的显著影响，特别是当缺陷密度超过临界阈值时引起的局域化效应。 载流子-载流子相互作用在高度掺杂或高注入密度下的作用是本书的关键章节之一。我们将利用朗道费米液体理论的框架来修正高密度等离子体中的有效散射率，并讨论载流子聚集（Carrier Clustering）现象对电导率和光致发光寿命的非线性影响。针对超快过程，本书将介绍非平衡态格林函数（NEGF）方法，用于描述在极短时间尺度内（皮秒至飞秒）载流子从注入到热化的动力学过程。 第二部分：光学响应的微扰理论与高级建模 在光学性质方面，本书将从线性响应理论出发，建立电导率张量与载流子分布函数之间的联系。我们将详细分析德鲁德模型（Drude Model）的适用边界，并引入量子限制效应对光学吸收边和色散关系的修正。 一个重要的章节将致力于电磁波在半导体中的传播与耦合。这包括对表面等离子激元（Surface Plasmon Polaritons, SPPs）在金属/半导体界面上的激发条件、场增强效应及其在传感应用中的潜力进行详尽的分析。此外，对体等离激元（Volume Plasmon Polaritons, VPPs）在颗粒状半导体复合材料中的共振行为也将进行深入探讨。 针对发光特性，本书将区分辐射复合（Radiative Recombination）与非辐射复合（Non-Radiative Recombination）机制。重点在于俄歇复合（Auger Recombination）的精确计算，尤其是在高载流子浓度下，俄歇过程如何成为限制发光效率的主要瓶颈。我们将采用基于第一性原理计算的速率方程模型来预测不同温度和注入水平下的量子效率。 第三部分：界面效应与异质结中的输运 半导体器件的性能往往受限于材料界面。本书将专门辟出章节讨论界面态（Interface States）对电荷俘获和电场分布的调控作用。通过肖特基势垒（Schottky Barrier）的能级图和热发射模型，我们将详细分析接触电阻和欧姆接触的形成机理。 在异质结体系中，晶格失配导致的位错（Dislocations）不仅影响载流子迁移率，更直接影响光发射。本书将结合应变工程（Strain Engineering）的原理，分析如何通过选择合适的衬底或超晶格结构来控制本征载流子有效质量和带隙，从而优化器件性能。 此外，对于量子阱（Quantum Wells）和量子点（Quantum Dots）等低维结构，本书将运用有效介质理论（Effective Medium Theory）和二维泊松方程来描述结构内部的电荷积累和势垒调制。特别关注载流子在尺寸限制下的量子限制霍尔效应及其对光学吸收特性的蓝移现象。 第四部分：实验技术与数据解读 理论模型必须与实验数据紧密结合。本书的最后部分将介绍几种关键的实验技术，并指导读者如何从实验数据中反演出所需的物理参数。 时间分辨光致发光（TRPL）将用于测量载流子寿命和复合速率。我们将讨论如何区分直接拟合指数衰减和更复杂的复合动力学模型。太赫兹光谱（THz Spectroscopy）作为一种非接触式的表征手段，将用于精确测量低频介电常数和远红外波段的载流子迁移率，尤其适用于分析掺杂不均匀性和自由载流子吸收。 电场调制光谱技术，如吸收差分光谱（Electroabsorption）和反射差分光谱（Electroreflectance），将被详细介绍，它们是确定关键跃迁能量和斯塔克效应（Stark Effect）的有力工具。通过解读这些光谱的洛伦兹函数拟合结果，读者将能确定界面势垒宽度和内部电场强度。 总结： 本书旨在提供一个多层次、跨学科的视角，连接了从基础量子力学到复杂工程应用的半导体物理链条。通过对载流子输运和光学响应的全面理论建模和对前沿实验技术的阐释，期望能为研究者提供解决当前半导体材料与器件挑战的坚实理论基础。
作者简介
目录信息
Part 1 Introduction to Kinetics and Many-Body Theory
1. Boltzmann Equation
1.1 Heuristic Derivation
of the Semiclassical Boltzmann Equation
1.2 Approach to Equilibrium, H-Theorem
1.3 Linearization, Eigenfunction Expansion
2. Numerical Solutions of the Boltzmann Equation
2.1 Linearized Coulomb Boltzmann Kinetics
of a 2D Electron Gas
2.2 Ensemble Monte Carlo Simulation
2.2.1 General Theory
2.2.2 Simulation of the Relaxation Kinetics
of a 2D Electron Gas
2.3 N+N-N+-Structure: Boltzmann Equation Analysis
3. Equilibrium Green Function Theory
3.1 Second Quantization
3.2 Green Functions
3.2.1 Examples of Measurable Quantities
3.3 Fluctuation-Dissipation Theorem
3.4 Perturbation Expansion of the Green Function
3.5 Examples of Simple Solvable Models
3.5.1 Free-Particle Green Function
3.5.2 Resonant-Level Model
3.6 Self-Energy
3.6.1 Electron-Phonon Interaction
3.6.2 Elastic Impurity System; Impurity Averaging
3.7 Finite Temperatures
Part 11 Nonequilibrium Many-Body Theory
4. Contour Ordered Green Functions
4.1 General Remarks
4.2 Two Transformations
4.3 Analytic Continuation
5 Basic Quantum Kinetic Equations
5.1 The Kadanoff-Baym Formulation
5.2 The Keldysh Formulation
6. Boltzmann Limit
6.1 Gradient Expansion
6.2 Quasiparticle Approximation
6.3 Recovery of the Boltzmann Equation
7 Gauge Invariance
7.1 Choice of Variables
7.2 Gauge Invariant Quantum Kinetic Equation
7.2.1 Driving Term
7.2.2 Collision Term
7.3 Retarded Green Function
8. Quantum Distribution Functions
8.1 Relation to Observables, and the Wigner Function
8.2 Generalized Kadanoff-Baym Ansatz
8.3 Summary of the Main Formal Results
Part III Quantum Transport in Semiconductors
9. Linear Transport
9.1 Quantum Boltzmann Equation
9.2 Linear Conductivity of Electron-Elastic Impurity Systems
9.2.1 Kubo Formula
9.2.2 Quantum Kinetic Formulation
9.3 Weak Localization Corrections to Electric Conductivity
10. A Model for Dynamical Disorder:
The Gaussian White Noise Model
10.1 Introduction
10.2 Determination of the Retarded Green Function
10.3 Kinetic Equation for the GWN
10.4 Other Transport Properties
11. Quantum High-Field Transport in Semiconductors
11.1 Introduction
11.2 Free Green Functions and Spectral Functions
in an Electric Field
11.3 Resonant-Level Model in High Electric Fields
11.3.1 Introduction
11.3.2 Retarded Green Function: Single Impurity Problem
11.3.3 Retarded Green Function: Dilute Concentration
of Impurities
11.3.4 Analytic Continuation
11.3.5 Quantum Kinetic Equation
11.4 Quantum Kinetic Equation for Electron-Phonon Systems
11.5 An Application:
Collision Broadening for a Model Semiconductor
11.5.1 Analytical Considerations
11.5.2 A Simple Model:
Optical Phonon Emission at T = 0
11.6 Spatially Inhomogeneous Systems
12. Transport in Mesoscopic Semiconductor Structures
12.1 Introduction
12.2 Nonequilibrium Techniques
in Mesoscopic Tunneling Structures
12.3 Model Hamiltonian
12.4 General Expression for the Current
12.5 Non-Interacting Resonant-Level Model
12.6 Resonant Tunneling with Electron-Phonon Interactions
12.7 Transport Through a Coulomb Island
13. Time-Dependent Phenomena
13.1 Introduction
13.2 Applicability to Experiments
13.3 Mathematical Formulation
13.4 Average Current
13.5 Time-Dependent Resonant-Level Model
13.5.1 Response to Harmonic Modulation
13.5.2 Response to Step-Like Modulation
13.6 Linear-Response
13.7 Fluctuating Energy Levels
Part IV Theory of Ultrafast Kinetics
in Laser-Excited Semiconductors
14. Optical Free-Carrier Interband Kinetics
in Semiconductors
14.1 Interband Transitions in Direct-Gap Semiconductors
14.2 Free-Carrier Kinetics Under Laser-Pulse Excitation
14.3 The Optical Free-Carrier Bloch Equations
15. Interband Quantum Kinetics
with LO-Phonon Scattering
15.1 Derivation of the Interband Quantum Kinetic Equations
15.2 Approximations for the Green Functions G and G
15.3 Intraband Quantum Kinetics
15.4 Linear Polarization Kinetics, Phonon Sidebands
15.5 Coupled Interband Kinetic Equations
in Diagonal Approximation
15.6 Numerical Studies
16. Exciton Quantum Kinetics in Polar Semiconductors
16.1 Interband Quantum Kinetic Equations
with Excitonic Effects
16.2 Quantum Beats and Urbach Tail
16.2.1 LO-Phonon Quantum Beats
16.2.2 Urbach Tail Absorption
16.3 Excitonic Optical Stark Effect
16.4 Coupled Quantum Kinetics of Electrons and Phonons
16.5 Quantum Coherence of the Green Functions
17. Two-Pulse Excitation
17.1 Calculation of the Photon Echo
17.2 Calculation of the Four-Wave Mixing Signal
17.3 Comparison with Four-Wave Mixing Experiments
18. Coulomb Quantum Kinetics in a Dense Electron Gas
18.1 Introduction
18.2 Derivation of a Closed Quantum Kinetic Description
18.3 Simplifying Approximations
18.3.1 Initial Time Regime Without Screening
and Energy Conservation
18.3.2 Time-Dependent Plasmon Pole Approximation
18.3.3 Instantaneous Static Potential Approximation
19. Interband Coulomb Quantum Kinetics,
Optical Dephasing
19.1 Interband Quantum Kinetic Equations
with Coulomb Interaction
19.2 Early Stage of the Coulomb Quantum Kinetics
19.3 Quasi-Classical Theory of the Polarization Decay
20. The Build-Up of Screening
After Ultra-Short Pulse Excitation
20.1 The Model
20.2 Numerical Results
References
Subject Index
· · · · · · (收起)
1. Boltzmann Equation
1.1 Heuristic Derivation
of the Semiclassical Boltzmann Equation
1.2 Approach to Equilibrium, H-Theorem
1.3 Linearization, Eigenfunction Expansion
2. Numerical Solutions of the Boltzmann Equation
2.1 Linearized Coulomb Boltzmann Kinetics
of a 2D Electron Gas
2.2 Ensemble Monte Carlo Simulation
2.2.1 General Theory
2.2.2 Simulation of the Relaxation Kinetics
of a 2D Electron Gas
2.3 N+N-N+-Structure: Boltzmann Equation Analysis
3. Equilibrium Green Function Theory
3.1 Second Quantization
3.2 Green Functions
3.2.1 Examples of Measurable Quantities
3.3 Fluctuation-Dissipation Theorem
3.4 Perturbation Expansion of the Green Function
3.5 Examples of Simple Solvable Models
3.5.1 Free-Particle Green Function
3.5.2 Resonant-Level Model
3.6 Self-Energy
3.6.1 Electron-Phonon Interaction
3.6.2 Elastic Impurity System; Impurity Averaging
3.7 Finite Temperatures
Part 11 Nonequilibrium Many-Body Theory
4. Contour Ordered Green Functions
4.1 General Remarks
4.2 Two Transformations
4.3 Analytic Continuation
5 Basic Quantum Kinetic Equations
5.1 The Kadanoff-Baym Formulation
5.2 The Keldysh Formulation
6. Boltzmann Limit
6.1 Gradient Expansion
6.2 Quasiparticle Approximation
6.3 Recovery of the Boltzmann Equation
7 Gauge Invariance
7.1 Choice of Variables
7.2 Gauge Invariant Quantum Kinetic Equation
7.2.1 Driving Term
7.2.2 Collision Term
7.3 Retarded Green Function
8. Quantum Distribution Functions
8.1 Relation to Observables, and the Wigner Function
8.2 Generalized Kadanoff-Baym Ansatz
8.3 Summary of the Main Formal Results
Part III Quantum Transport in Semiconductors
9. Linear Transport
9.1 Quantum Boltzmann Equation
9.2 Linear Conductivity of Electron-Elastic Impurity Systems
9.2.1 Kubo Formula
9.2.2 Quantum Kinetic Formulation
9.3 Weak Localization Corrections to Electric Conductivity
10. A Model for Dynamical Disorder:
The Gaussian White Noise Model
10.1 Introduction
10.2 Determination of the Retarded Green Function
10.3 Kinetic Equation for the GWN
10.4 Other Transport Properties
11. Quantum High-Field Transport in Semiconductors
11.1 Introduction
11.2 Free Green Functions and Spectral Functions
in an Electric Field
11.3 Resonant-Level Model in High Electric Fields
11.3.1 Introduction
11.3.2 Retarded Green Function: Single Impurity Problem
11.3.3 Retarded Green Function: Dilute Concentration
of Impurities
11.3.4 Analytic Continuation
11.3.5 Quantum Kinetic Equation
11.4 Quantum Kinetic Equation for Electron-Phonon Systems
11.5 An Application:
Collision Broadening for a Model Semiconductor
11.5.1 Analytical Considerations
11.5.2 A Simple Model:
Optical Phonon Emission at T = 0
11.6 Spatially Inhomogeneous Systems
12. Transport in Mesoscopic Semiconductor Structures
12.1 Introduction
12.2 Nonequilibrium Techniques
in Mesoscopic Tunneling Structures
12.3 Model Hamiltonian
12.4 General Expression for the Current
12.5 Non-Interacting Resonant-Level Model
12.6 Resonant Tunneling with Electron-Phonon Interactions
12.7 Transport Through a Coulomb Island
13. Time-Dependent Phenomena
13.1 Introduction
13.2 Applicability to Experiments
13.3 Mathematical Formulation
13.4 Average Current
13.5 Time-Dependent Resonant-Level Model
13.5.1 Response to Harmonic Modulation
13.5.2 Response to Step-Like Modulation
13.6 Linear-Response
13.7 Fluctuating Energy Levels
Part IV Theory of Ultrafast Kinetics
in Laser-Excited Semiconductors
14. Optical Free-Carrier Interband Kinetics
in Semiconductors
14.1 Interband Transitions in Direct-Gap Semiconductors
14.2 Free-Carrier Kinetics Under Laser-Pulse Excitation
14.3 The Optical Free-Carrier Bloch Equations
15. Interband Quantum Kinetics
with LO-Phonon Scattering
15.1 Derivation of the Interband Quantum Kinetic Equations
15.2 Approximations for the Green Functions G and G
15.3 Intraband Quantum Kinetics
15.4 Linear Polarization Kinetics, Phonon Sidebands
15.5 Coupled Interband Kinetic Equations
in Diagonal Approximation
15.6 Numerical Studies
16. Exciton Quantum Kinetics in Polar Semiconductors
16.1 Interband Quantum Kinetic Equations
with Excitonic Effects
16.2 Quantum Beats and Urbach Tail
16.2.1 LO-Phonon Quantum Beats
16.2.2 Urbach Tail Absorption
16.3 Excitonic Optical Stark Effect
16.4 Coupled Quantum Kinetics of Electrons and Phonons
16.5 Quantum Coherence of the Green Functions
17. Two-Pulse Excitation
17.1 Calculation of the Photon Echo
17.2 Calculation of the Four-Wave Mixing Signal
17.3 Comparison with Four-Wave Mixing Experiments
18. Coulomb Quantum Kinetics in a Dense Electron Gas
18.1 Introduction
18.2 Derivation of a Closed Quantum Kinetic Description
18.3 Simplifying Approximations
18.3.1 Initial Time Regime Without Screening
and Energy Conservation
18.3.2 Time-Dependent Plasmon Pole Approximation
18.3.3 Instantaneous Static Potential Approximation
19. Interband Coulomb Quantum Kinetics,
Optical Dephasing
19.1 Interband Quantum Kinetic Equations
with Coulomb Interaction
19.2 Early Stage of the Coulomb Quantum Kinetics
19.3 Quasi-Classical Theory of the Polarization Decay
20. The Build-Up of Screening
After Ultra-Short Pulse Excitation
20.1 The Model
20.2 Numerical Results
References
Subject Index
· · · · · · (收起)
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经典之作，如果你学过了mahan的many particle physics中关于格林函数的部分，那么接下来你可以直接拿起本书，看第一部分的最后2章。因为那2章是讲述NEGF的重要章节，理解它们，你可以直击Phys Rev Lett上的部分工作。当今器件物理中NEGF是如此之重要
评分经典之作，如果你学过了mahan的many particle physics中关于格林函数的部分，那么接下来你可以直接拿起本书，看第一部分的最后2章。因为那2章是讲述NEGF的重要章节，理解它们，你可以直击Phys Rev Lett上的部分工作。当今器件物理中NEGF是如此之重要
评分经典之作，如果你学过了mahan的many particle physics中关于格林函数的部分，那么接下来你可以直接拿起本书，看第一部分的最后2章。因为那2章是讲述NEGF的重要章节，理解它们，你可以直击Phys Rev Lett上的部分工作。当今器件物理中NEGF是如此之重要
评分经典之作，如果你学过了mahan的many particle physics中关于格林函数的部分，那么接下来你可以直接拿起本书，看第一部分的最后2章。因为那2章是讲述NEGF的重要章节，理解它们，你可以直击Phys Rev Lett上的部分工作。当今器件物理中NEGF是如此之重要
评分经典之作，如果你学过了mahan的many particle physics中关于格林函数的部分，那么接下来你可以直接拿起本书，看第一部分的最后2章。因为那2章是讲述NEGF的重要章节，理解它们，你可以直击Phys Rev Lett上的部分工作。当今器件物理中NEGF是如此之重要
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